Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects

<table>The PL intensity
as a function of excitation intensity in MBE grown Si/Si<sub>1-x</sub>Ge<sub>x</sub> 3D NS samples with the indicated average Ge concentration <i>x</i>. The PL bands
associated with the cluster core, wetting layer (WL), and characteristic TO
phonons are indicated.</table>

Advances in Optical Technologies

fig4

Figure 4

Figure 4: Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects 