Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects
Figure 7
Raman spectra measured
using 458 nm excitation in MBE grown Si/Si1-xGex 3D NS
samples with x approaching 50%. (a) A full-range spectrum comparing the major
SiGe Raman modes with the positions of the Raman peaks seen in a-Si and a-Ge.
(b) Raman spectrum on a linear intensity scale showing Si–Si vibrational modes
including the vibration associated with strained Si at ~507 cm-1.
