Light Emission from Rare-Earth Doped Silicon Nanostructures

<table>Integrated PL intensities in the range of 350–700 nm from the Ce:ORSO
samples with various Ce concentrations as a function of annealing temperature.
The inset shows an image of strong blue emission from the 1.0 at.% Ce sample
after annealing at 1200<sup>°</sup>C taken by camera.</table>

Advances in Optical Technologies

fig10

Figure 10

Figure 10: Light Emission from Rare-Earth Doped Silicon Nanostructures 