Light Emission from Rare-Earth Doped Silicon Nanostructures

<table>PL
intensity of Tb<sup>3+</sup> at 546 nm from two Tb:ORSO samples as a function
of annealing temperature. The inset shows an image of strong green Tb emission
from the 0.4 at.% Tb sample after annealing at 800<sup>°</sup>C taken by
camera.</table>

Advances in Optical Technologies

fig5

Figure 5

Figure 5: Light Emission from Rare-Earth Doped Silicon Nanostructures 