Light Emission from Rare-Earth Doped Silicon Nanostructures

<table>PL
peak intensities of Si-ncs from the Tb:SRSO samples with various Tb
concentrations as a function of annealing temperature. The inset shows the
PL intensity of Tb<sup>3+</sup> at 546 nm from Tb: SRSO samples after annealing
at 1200<sup>°</sup>C as a
function of Tb concentration.</table>

Advances in Optical Technologies

fig8

Figure 8

Figure 8: Light Emission from Rare-Earth Doped Silicon Nanostructures 