Light Emission from Rare-Earth Doped Silicon Nanostructures
Table 1
Summary of the
deposition parameters and their values for the depositions in this study.
Dopant
type
RE
concentration [at.%]
Si concentration
[at.%]
Forwarded power
[W]
Reflected power
[W]
SiH4 flow rate
O2 flow rate
Ar flow rate
RE cell temp [°C]
Tb
0.4(2)
32
420
10
7
24
20
160
0.8(2)
32
420
10
7
24
30
160
0.1(2)
36
608
7
20
60
25
160
0.2(2)
38
327
27
20
56
25
156
0.3(2)
36
500
5
20
56
25
153
Ce
0.01(2)
33
510
5
11
78
12
100
0.1(3)
32
507
7
4
40
25
180
1.0(3)
32
509
7
2
30
10
200
0.04(2)
40
515
5
25
70
12
161
(2) The sample was deposited using mass flow controller 1, the corresponding flow
rate unit is mV. (3) The sample was deposited using mass flow controller 2, the corresponding flow
rate unit is sccm.