Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer

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<g transform="matrix(.017,-0,0,-.017,.062,11.363)"><path d="M409 504l-29 -5q-16 60 -44.5 96t-86.5 36q-54 0 -82.5 -32t-28.5 -77q0 -51 30.5 -82.5t96.5 -65.5l35.5 -18t33 -19.5t33.5 -23.5l27 -25.5t24.5 -32t13.5 -36.5t6 -45q0 -80 -62 -134.5t-160 -54.5q-47 0 -98 15q-22 7 -50 21q-8 23 -27 155l30 7q7 -27 18 -52
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<g transform="matrix(.012,-0,0,-.012,25.275,15.45)"><path d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" id="x32"></path></g>
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Advances in Optical Technologies

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Figure 16

Figure 16: Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer 