Research Article
Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer
Table 1
State of the art of silicon-based
optical modulators.
| | Modulator
type | λ () | | Bandwidth
or | Extinction | Insertion
| Labs | | () | time constant | ratio (dB) | loss (dB) |
| | Franz Keldysh effect in Ge diode | 1.647 | no | | 7.5 | 2.5 | S. Jongthammanurak,
| | Group IV photonics, | | ottawa (2006) |
| | Quantum
confined Stark | 1.55
at | no | | Absorption
coefficient contrast >3 | | Kuo and al, IEEE
| | effect (QCSE) in Ge/SiGe | JSTQE, 12 (6) | | quantum wells | p1503 (2006) |
| | Carrier
injection
| 1.55 | | 12.5 Gbit/s | >9 | | Q. Xu et al.,
Optics express, | | in lateral PIN diode | 15 (2) p 430 (2007) |
| |
MOS
capacitance |
1.55 | 7.7 | 1
GHz | | | A. Liu et al., nature
| | 427, 615–618 (2004) | | 3.3 | 10
Gbit/s | 3.8 | 10 | L. Liao et al., | | optics
express 13, | | 3129–3135 (2005) |
| | Carrier
depletion
| 1.55 | 4 | 30
GHz
(40
Gbit/s) | | 7 | Liu and al
optics express, | | (vertical PN diode) | 15 (2) p660, (2007) |
| | Carrier
depletion
| 1.31 1.55 | 3.1 (exp) | Time constant
| | | D. Marris-Morini
et al., | | (Doped
modulation of | ~ 1ps
| optics express, 14 | | vertical Si PIN diode) | (Theory) | (22) 10838 (2006) |
| | Carrier
depletion
| 1.55 | 5 | 10 GHz | | 5 | This
work | | (Doped
modulation of | | all Si lateral PIN
diode) |
| | Carrier
depletion
| 1.55 | 3 | 9
GHz | 6 | 3 | T.
Pinguet
| | (Doped
modulation of | Group IV photonics
| | all Si lateral PN diode) | Tokyo 2007 |
| | Carrier
depletion | 1.55 | 2.5
(theory) | Time
constant
| | 2 | F. Y. Gardes et al., | | (four
terminal p+pnn+ | birefringence | <7 ps | optics express 13
(22), | | vertical device) | free | (Theory) | 8845–8854, (2005) |
|
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