Silicon-Based Light Sources for Silicon Integrated Circuits

Table 1

Summary of the various cross-sections related to ${\text{Er}}^{3+}$ coupled to Si-nc. These values are the results of the LANCER collaboration [71].

Erbium absorption cross-section at 1530 nm	${\sigma }_{\text{abs}}$ = 6.6 × 10^-21 ${\text{cm}}^2$
Erbium emission cross-section at 1530 nm	${\sigma }_{\text{em}}$ = 5.7 × 10^-21 ${\text{cm}}^2$
Erbium effective cross-section at 470 nm	${\sigma }_{\text{exc}}$ = 2 × 10^-16 ${\text{cm}}^2$
Erbium metastable level lifetime	3 ms
Erbium decay time ${}^4{I}_{11/2}$ to ${}^4{I}_{13/2}$ transition	2.38 $\mu$s
Upconversion coefficient $C_{\text{up}}$ for $N_{\text{Er}}<3\times {10}^{20}\hspace{0.17em}{\text{cm}}^{-3}$	$7\times {10}^{-17}\hspace{0.17em}{\text{cm}}^3/\text{s}$
Si-nc absorption cross-section at 470 nm	${\sigma }_{\text{Si}}$ = 2 × 10^-16 ${\text{cm}}^2$
Si-nc exciton lifetime ${\tau }_{\text{ab}}$	50 $\mu$s
Transfer coefficient	$C_{b1}=2\times {10}^{-15}\hspace{0.17em}{\text{cm}}^3/\text{s}$