On-Chip All-Optical Switching and Memory by Silicon Photonic Crystal Nanocavities
Figure 1
Width-modulated, line-defect photonic crystal cavities. (a) Cavity design.
The cavity has the theoretical Q. The hole shifts are typically 9 nm
(red holes), 6 nm (green holes), and 3 nm (blue holes). (b) Spectral
measurement of a nanocavity fabricated in a silicon hexagonal air-hole photonic
slab with nm and nm. The transmission spectrum of a
cavity with a second-stage hole-shift. The inner and outer hole-shifts are 8
and 4 nm, respectively. (c) Time-domain ring-down measurement. The time decay
of the output light intensity from the same cavity as (b). Details can be found
in the reference.
