On-Chip All-Optical Switching and Memory by Silicon Photonic Crystal Nanocavities
Figure 2
All-optical bistable switching in a silicon hexagonal air-hole photonic
crystal nanocavity (end-hole shifted four-point defect cavity) realized by the
thermo-optic nonlinearity induced by two-photon absorption in silicon. (a)
Schematic of the sample and a scanning electron micrograph of the sample. nm, . The radius of
end-holes of the cavity is 0.125a. V = 0.102 μm3. The radius of end-holes of the
waveguide is 0.15a. (b) Intensity-dependent
transmission spectra taken by a tunable laser in the upsweep condition. Q in the linear regime is 33400. (c)
Output power versus input power for various detuning values. The nonlinear
regime starts from 10 μW, and the bistable regime starts from 40 μW.
