On-Chip All-Optical Switching and Memory by Silicon Photonic Crystal Nanocavities
Figure 4
All-optical switching in a silicon photonic crystal nanocavity (end-hole
shifted four point cavity) realized by carrier-plasma nonlinearity induced by
two-photon absorption in silicon. Q for the control mode is 11500, and Q for the signal mode is 23000. (a) AND-type switching at various control pulse
energies with the detuning of nm. (b) NOT-type switching at various
control pulse energies with no detuning. Each line is shifted by 500 picoseconds.