Review Article

On-Chip All-Optical Switching and Memory by Silicon Photonic Crystal Nanocavities

Figure 4

All-optical switching in a silicon photonic crystal nanocavity (end-hole shifted four point cavity) realized by carrier-plasma nonlinearity induced by two-photon absorption in silicon. Q for the control mode is 11500, and Q for the signal mode is 23000. (a) AND-type switching at various control pulse energies with the detuning of  nm. (b) NOT-type switching at various control pulse energies with no detuning. Each line is shifted by 500 picoseconds.
568936.fig.004a
(a)
568936.fig.004b
(b)