Developments in Gigascale Silicon Optical Modulators Using Free Carrier Dispersion Mechanisms
Figure 2
Impedance of a 315 μm long phase-shift segment on the MOS
capacitor-based modulator. Resistance is measured as ~6.5 Ω, while
a modeled capacitance of ~2.4 pF fits the measured reactance,
giving an RC cutoff of 10.2 GHz.