Research Article

Developments in Gigascale Silicon Optical Modulators Using Free Carrier Dispersion Mechanisms

Figure 2

Impedance of a 315 μm long phase-shift segment on the MOS capacitor-based modulator. Resistance is measured as ~6.5 Ω, while a modeled capacitance of ~2.4 pF fits the measured reactance, giving an RC cutoff of 10.2 GHz.
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