Review Article

Photonic Integration on the Hybrid Silicon Evanescent Device Platform

Table 1

III-V epitaxial layer structure with a 1550 nm photoluminescence peak.

NameCompositionDoping concentrationThickness

P contact layer P-type As 0.1  m
Cladding P-type InP 1.5  m
SCHP-type As, 1.3Q 0.25  m
Quantum wells As, 1.3Q(9x)undoped10 nm
As, 1.7Q(8x)undoped 7 nm
N layer N-type InP 110 nm
Super lattice N-type , 1.1Q(2x) 7.5 nm
N-type InP (2x) 7.5 nm
N bonding layerN-type InP 10 nm