Review Article
Photonic Integration on the Hybrid Silicon Evanescent Device Platform
Table 1
III-V epitaxial layer structure with a 1550 nm
photoluminescence peak.
| Name | Composition | Doping concentration | Thickness |
| P contact layer
| P-type
As | | 0.1 m | Cladding
| P-type InP | | 1.5 m
| SCH | P-type As, 1.3Q | | 0.25 m | Quantum wells | As, 1.3Q(9x) | undoped | 10 nm | As, 1.7Q(8x) | undoped | 7 nm
| N layer | N-type InP | | 110 nm | Super lattice | N-type , 1.1Q(2x) | | 7.5 nm | N-type InP (2x) | | 7.5 nm | N bonding layer | N-type InP | | 10 nm |
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