Photonic Integration on the Hybrid Silicon Evanescent Device Platform

Table 3

III-V epitaxial layer structure with a 1478 nm photoluminescence peak.

Name	Composition	Doping concentration	Thickness
P contact layer	P-type In0.53 Ga0.47As	1×10^19cm^−3	0.1 𝜇m
Cladding	P-type InP	1×10^18cm^−3	1.5 𝜇m
SCH	P-type Ai0.160 Ga0.320 In0.520As, 1.3Q	1×10^17cm^−3	0.15 𝜇m
Quantum wells	Ai0200 Ga0.330 In0.470As, 1.19Q(11x)	Undoped	7 nm
	Ai0.080 Ga0.330 In0.590As, 1.55Q(10x)	Undoped	11 nm
SCH	Ai0.160 Ga0.320 In0.520As, 1.3Q	Undoped	0.1 𝜇m
N layer	N-type InP	1×10^18cm^−3	110 nm
Super lattice	N-type In0.85 Ga0.15 As0.327 P0.673, 1.1Q(2x)	1×10^18cm^−3	7.5 nm
	N-type InP (2x)	1×10^18cm^−3	7.5 nm
N bonding layer	N-type InP	1×10^18cm^−3	10 nm