A New Approach of Electronics and Photonics Convergence on Si CMOS Platform: How to Reduce Device Diversity of Photonics for Integration

<table>The direct bandgap versus SiGe alloy composition. The reported data were taken from bulk Ge using electroreflectance. Our data based on
photoreflectance shows smaller direct bandgap in terms of tensile-strain in Ge
epi on Si.</table>

Advances in Optical Technologies

fig7

Figure 7

Figure 7: A New Approach of Electronics and Photonics Convergence on Si CMOS Platform: How to Reduce Device Diversity of Photonics for Integration 