Research Article

Laser-Combined Scanning Tunneling Microscopy on the Carrier Dynamics in Low-Temperature-Grown GaAs/AlGaAs/GaAs

Figure 4

Results of time-resolved measurement ( Δ 𝐼 versus 𝑡 𝑑 curves) for (a) GaAs (400 nm from the GaAs/AlGaAs interface), (b) AlGaAs (180 nm from the AlGaAs/GaAs interface), and (c) LT-GaAs (75 nm from the AlGaAs/LT-GaAs interface) regions. 𝑉 𝑠 = 5 . 5 V , 𝐼 = 4 5 p A .
510186.fig.004a
510186.fig.004b