Laser-Combined Scanning Tunneling Microscopy on the Carrier Dynamics in Low-Temperature-Grown GaAs/AlGaAs/GaAs

<table>Time evolution of in-depth band diagram (a) before excitation, (b) immediately after excitation, (c) during bulk-side carrier decay, and (d) during surface-side carrier decay. VL, CB, VB, and <svg height="14.2375" id="M32" style="vertical-align:-3.13504pt" version="1.1" viewbox="0 0 20.25 14.2375" width="20.25" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,14.2375)">
<g transform="translate(72,-60.61)">
<text transform="matrix(1,0,0,-1,-71.95,63.79)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝐸</tspan>
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<text transform="matrix(1,0,0,-1,-63.02,60.66)">
<tspan style="font-size: 8.75px; " x="0" y="0">𝐹</tspan>
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</svg> denote the vacuum level, conduction band, valence band, and Fermi level energy, respectively. Blue and red circles are electrons and holes, respectively.</table>

Advances in Optical Technologies

fig5

Figure 5

Figure 5: Laser-Combined Scanning Tunneling Microscopy on the Carrier Dynamics in Low-Temperature-Grown GaAs/AlGaAs/GaAs 