Laser-Combined Scanning Tunneling Microscopy on the Carrier Dynamics in Low-Temperature-Grown GaAs/AlGaAs/GaAs

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</svg> with the tip scanned across the AlGaAs/LT-GaAs interface. Each profile is offset by 0.5 pA steps for clarity. (b) Time evolution of in-plane band diagram near the interface: (i) before excitation and (ii) immediately after excitation. <svg height="14.9" id="M44" style="vertical-align:-3.2316pt" version="1.1" viewbox="0 0 67.362503 14.9" width="67.362503" xmlns="http://www.w3.org/2000/svg">
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Advances in Optical Technologies

fig6

Figure 6

Figure 6: Laser-Combined Scanning Tunneling Microscopy on the Carrier Dynamics in Low-Temperature-Grown GaAs/AlGaAs/GaAs 