Review Article

Cavity Solitons in VCSEL Devices

Figure 2

(a) Schematic representation of optical pumping in a semiconductor material: a pump photon of energy 𝜔 𝑝 is absorbed in the semiconductor material creating an electron-hole pair. The electron and hole cascade to the bottom of the bands releasing extra energy to the lattice and eventually recombine either radiatively or nonradiatively. (b) (after [67]): Layer widths of the optimized structure. The substrate is on the left side of the figure. The cavity is filled by two absorbing A l 0 . 0 7 G a 0 . 9 3 As spacers (layers 61 and 63) white bars around a bulk GaAs active layer (layer 62, in black). The back and front Bragg mirrors are composed of alternating A l 0 . 2 2 G a 0 . 7 8 As (dark gray) and AlAs (light gray) layers.
628761.fig.002a
(a)
628761.fig.002b
(b)