High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes
Figure 14
Depth profile of Al for the samples grown at the Al cell temperature (TAl) of 1020°C and 750°C [32]. Those were grown with the sequences (i)–(xvi) skipping the procedures between (iv) and (vii) shown in Figure 12. The representative numbers of the steps are mentioned in Figure 10.
