High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes

<table>Schematic diagram of bandgap of GaInAs, GaNAs, and GaInNAs. For lattice matching of GaInNAs to GaAs, In concentration is required to be approximately 3 times of N concentration. For example, Ga<sub>0.90</sub>In<sub>0.10</sub>N<sub>0.035</sub>As<sub>0.965</sub> is lattice-matched.</table>

Advances in Optical Technologies

fig4

Figure 4

Figure 4: High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes 