High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes

<table>The quantum levels in a 10 nm thick Ga<sub>0.68</sub>In<sub>0.32</sub>N<sub>0.01</sub>A<sub>0.99</sub>/GaAs well with an emission wavelength of 1.31 <i>μ</i>m. </table>

Advances in Optical Technologies

fig6

Figure 6

Figure 6: High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes 