High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes

<table>Relationship between the impurity concentrations and I<sub>th</sub> of the GaIn(N)As LDs [<a href="/journals/aot/2012/754546/#B30">30</a>].</table>

Advances in Optical Technologies

fig8

Figure 8

Figure 8: High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes 