Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes

Table 1

Parameters taken in modelling of MWIR InAs/GaSb superlattice photodiodes.

Device geometry
thickness of p-type region, 𝑥𝑝	0.27 μm
thickness of n-type region, 𝑥𝑛	2.25 μm
electrical area	2.03 × 10^−3 cm^2
Donor concentration, 𝑁𝑑	1 × 10^16 cm^−3
Acceptor concentration, 𝑁𝑎	1 × 10^18 cm^−3
Trap concentration, 𝑁𝑇	8 × 10^14 cm^−3
Minority electron mobility, 𝜇𝑒	10000 cm^2/Vs
Minority hole mobility, 𝜇ℎ	1000 cm^2/Vs
Electron-effective mass, 𝑚^∗𝑒	0.015𝑚0
Hole effective mass, 𝑚^∗ℎ	0.4𝑚0