GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing

Figure 6

Temporal changes in EL spectra during DPP-assisted annealing of GaP LED. (a) Spectra observed during DPP-assisted annealing with a current density of 9.9 A/cm² while irradiating device with 532 nm laser light with power of 0.4 W. EL measurements were performed every 1 hour under the same current density conditions (9.9 A/cm²), but without laser irradiation. (b) Total EL light emission intensity (integral of curve in (a)) versus time. (c) Measured values of . (d) Light emission from fabricated device.

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