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Advances in Power Electronics
Volume 2011 (2011), Article ID 164286, 6 pages
http://dx.doi.org/10.1155/2011/164286
Research Article

Heat Transfer of DE-Series MOSFETs

Vaal University of Technology, Private Bag X021, Vanderbijlpark 1900, South Africa

Received 19 January 2011; Accepted 6 May 2011

Academic Editor: Jose Pomilio

Copyright © 2011 Arthur James Swart. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

MOSFET devices have developed significantly over the past few years to become the number one choice for high-power applications in power electronics and electronic communication. Commercially available devices (such as the IXYS RF manufactured) now operate into the VHF range with output RF powers of up to 300 W. They are optimized for linear operation and suitable for broadcast and communication applications. This paper presents the heat transfer out of an IXZ210N50L MOSFET which is sandwiched between two identical heatsinks. The results reveal a linear decrease in heat flowing away from the top of the MOSFET when compared to the bottom of the MOSFET for each step increase of drain current. Two graphs (representing the top and bottom heatsinks connected to the MOSFET device) contrast the temperature rise for the Bisink technique when the drain current through the IXZ210N50L MOSFET is kept constant at 5 A. The Bisink technique has the advantages of lower on-state resistances and higher output powers when compared to the traditional mounting using only one heatsink, resulting in improved reliability and performance. Results further reveal that the ambient temperature must be measured in the vicinity of the heatsink.