Abstract

This paper deals with the technology of the thin film transistor (TFT). It deals with the different semiconductors used successfully in a TFT, as well as the different gate insulators employed. A variety of structures have been realized in the past. The most important difficulty with the use of these TFT structures consisted of low frequency instabilities, caused by mobile ions in the insulator and slow states at the semiconductor-insulator interface. Various proposed solutions to these problems will be discussed.