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ElectroComponent Science and Technology
Volume 7 (1980), Issue 1-3, Pages 113-118
http://dx.doi.org/10.1155/APEC.7.113

Sintering Mechanisms in Base Metal Conductors

Katholieke Universiteit Leuven, Departement Elektrotechniek, Afdeling E.S.A.T. Kardinaal Mercierlaan 94, Heverlee 3030, Belgium

Received 23 October 1979

Copyright © 1980 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Thick film conductors based on Al, Cu and Ni have been studied. Because of its high depth of field, a SEM was used to study the microstructures of the fired conductors.

Because of the very small size of the particles in commercial Cu pastes the neck growth forms part of the grain growth mechanism.

The bonding between the particles is much stronger in Cu than in Al films; this seems to be the reason why the sheet resistance of a Cu film virtually reaches the theoretical minimum.