Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime
Figure 4
(a) Effect of electron dominated photo-current on 4H-SiC DDR IMPATT diode at Terahertz region. (b) Effect of hole dominated photo-current on 4H-SiC DDR IMPATT diode at Terahertz region.