Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

<table>(a) Effect of electron dominated photo-current on negative resistivity profile of 4H-SiC DDR IMPATT diode. (b) Effect of hole dominated photo-current on negative resistivity profile of 4H-SiC DDR IMPATT diode.</table>

Active and Passive Electronic Components

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Figure 5

Figure 5: Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime 