Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

<table>Experimental setup for optical illumination experiment on 4H-SiC IMPATT diode at THz region.</table>

Active and Passive Electronic Components

Figure 8: Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime 