Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

Table 2

Dc and small-signal properties of 4H-SiC IMPATT diode.

Diode parameters	4H-SiC DDR IMPATT
𝐸𝑚 (10^8 V m^−1)	5.25
𝑉𝐵 (V)	55.3
η (%)	10.5
𝑓𝑃 (THz)	0.7
−𝐺𝑝 (10^8 S m^−2)	7.40
−𝑄𝑃	1.6
𝑃RF (𝑅𝑠=0.0 Ω) (10^11 Wm^−2)	2.8
𝑃RF (𝑅𝑠,total=0.7 Ω) (10^11 Wm^−2)	2.5