Research Article

Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

Table 3

Series resistance of 4H-SiC IMPATT at 0.7 THz.

Negative conductance ( ) (108 Sm−2)Susceptace (B)  (108 Sm−2)Load conductance (108 Sm−2)Series resistance ( ) (10−10 Ωm2)Negative resistance ( ) (10−10 Ωm2)

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