Research Article
Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime
Table 3
Series resistance of 4H-SiC IMPATT at 0.7 THz.
| Negative conductance
() (108 Sm−2) | Susceptace (B) (108 Sm−2) | Load conductance
(108 Sm−2) | Series
resistance ()
(10−10 Ωm2) | Negative
resistance ()
(10−10 Ωm2) |
| 7.4 | 12.0 | 6.7 | 0.49 | 3.8 |
|
|