Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

Table 4

Variation of small-signal properties of 4H-SiC DDR IMPATT under optical-illumination.

𝑀𝑛	𝑀𝑝	𝑓𝑃 (THz)	−𝐺𝑝 (10^8 Sm^−2)	−𝑍𝑅𝑝 (10^−10 Ωm^2)	𝑃RF (10^11 Wm^−2)	−𝑄𝑃
10^6	10^6	0.70	7.4	3.8	2.82	1.6
100	,,	0.71	7.2	2.6	2.75	2.08
50	,,	0.75	7.1	2.1	2.71	2.39
25	,,	0.78	6.9	1.7	2.63	2.75
10^6	100	0.78	7.0	2.5	2.67	2.14
,,	50	0.82	6.4	1.6	2.45	2.97
,,	25	0.90	5.7	0.95	2.18	4.2