Research Article

Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral

Figure 9

The limits of surface potentials 𝑒 𝑆 ( 0 ) and 𝑒 𝑆 ( 𝐿 )   versus 𝑉 𝐷 . (a) strong inversion, (b) weak inversion. 𝑁 𝐴 = 1 0 1 7 c m βˆ’ 3 , 𝑑 o x = 1 0  nm , π‘Š / 𝐿 = 1 0 .
268431.fig.009a
(a)
268431.fig.009b
(b)