Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide <i>N</i>-Channel MOSFET

<table>Characteristic <svg height="10.325" id="M78" style="vertical-align:-0.0pt" version="1.1" viewbox="0 0 11.6125 10.325" width="11.6125" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,10.325)">
<g transform="translate(72,-63.74)">
<text transform="matrix(1,0,0,-1,-71.95,63.79)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝑌</tspan>
</text>
</g>
</g>
</svg> versus gate voltage.</table>

Active and Passive Electronic Components

fig2

Figure 2

Figure 2: Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide <i>N</i>-Channel MOSFET 

Figure 2 | Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET 