Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET

Table 1

Values of the different extracted parameters.

Parameter	𝜃𝑖 (1/V)	𝑅sd (Ω)	Δ (nm)
First method	0.363	107.53	0.31
Second method	0.36	108.8	0.28