AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results
Figure 11
(a) against and (b) against characteristics of fabricated two-finger 2.5 μm gate length AlN/GaN MOS-HEMT devices with optimised 20 s of etching time with passivated mesa sidewalls. The devices are biased from 3 V to −4 V with step size of 1 V.
