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Active and Passive Electronic Components
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Active and Passive Electronic Components
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2011
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Article
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Fig 3
/
Research Article
AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results
Figure 3
Current-voltage (
𝐼
-
𝑉
) characteristics on 5
μ
m TLM gap spacing of annealed Ohmic contacts under different Al etch times prior to Ohmic metal deposition.