AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

<table>Comparison of Ohmic contact resistance, <svg height="14.375" id="M21" style="vertical-align:-3.24037pt" version="1.1" viewbox="0 0 20.525 14.375" width="20.525" xmlns="http://www.w3.org/2000/svg">
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Active and Passive Electronic Components

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Figure 4

Figure 4: AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results 