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Active and Passive Electronic Components
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Active and Passive Electronic Components
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2011
/
Article
/
Fig 5
/
Research Article
AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results
Figure 5
SEM micrograph of completed gate wrap-around MOS-HEMT layout. Inset: Device with
𝐿
S
D
=
6
μ
m and
𝐿
𝐺
=
3
μ
m.