Research Article
AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results
Table 1
Summary of results for the optimised and values on HEMT and MOS-HEMT samples in the AlN/GaN material system.
| Sample | Description | , ฮฉยทmm | , ฮฉ/โก |
| A | Unprotected and unpassivated (HEMT) | 0.31 | 480 | B2 | Protected and passivated (MOS-HEMT) | 0.49 | 159 |
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