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Active and Passive Electronic Components
Volume 2011 (2011), Article ID 850481, 8 pages
doi:10.1155/2011/850481
Research Article
Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
ORDIST, Graduate School of Engineering Science, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
Received 14 June 2011; Revised 11 July 2011; Accepted 11 July 2011
Academic Editor: G. Ghibaudo
Copyright © 2011 Yasuhisa Omura. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
How to Cite this Article
Yasuhisa Omura, “Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation,” Active and Passive Electronic Components, vol. 2011, Article ID 850481, 8 pages, 2011. doi:10.1155/2011/850481