(a)
(b)
Figure 1:
Schematic device structure of HTOT SOI MOSFET. (a) Schematic view of device. (b) Schematic band structure from source to drain at
𝑉
𝑑
=
0
V.
𝐸
∗
𝐺
is the effective bandgap energy of ultrathin Si regions and
𝐸
∗
𝐺
>
𝐸
𝐺
.