Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation

Figure 1

Schematic device structure of HTOT SOI MOSFET. (a) Schematic view of device. (b) Schematic band structure from source to drain at 𝑉_𝑑=0 V. 𝐸^∗𝐺 is the effective bandgap energy of ultrathin Si regions and 𝐸^∗𝐺>𝐸_𝐺.

(a)

(b)