850481.fig.001a
(a)
850481.fig.001b
(b)
Figure 1: Schematic device structure of HTOT SOI MOSFET. (a) Schematic view of device. (b) Schematic band structure from source to drain at 𝑉 𝑑 = 0  V. 𝐸 𝐺 is the effective bandgap energy of ultrathin Si regions and 𝐸 𝐺 > 𝐸 𝐺 .