850481.fig.003
Figure 3: 𝐼 𝑑 - 𝑉 𝑔 characteristics of HTOT SOI MOSFET at 300 K for various drain voltage conditions. The device has a 40-nm long p-type region ( 𝐿 𝑝 ); 𝐿 𝑔 = 1 0 0  nm. The device has 1-nm-thick local-thin Si regions at both sides of n-type Si body.