Figure 3:
𝐼
𝑑
-
𝑉
𝑔
characteristics of HTOT SOI MOSFET at 300 K for various drain voltage conditions. The device has a 40-nm long
p
-type region (
𝐿
𝑝
);
𝐿
𝑔
=
1
0
0
nm. The device has 1-nm-thick local-thin Si regions at both sides of
n
-type Si body.
