850481.fig.004
Figure 4: 𝐼 𝑑 - 𝑉 𝑑 characteristics of HTOT SOI MOSFET for various gate voltage conditions at 300 K. The device has a 40-nm long p-type region (Lp); 𝐿 𝑔 = 1 0 0  nm. The device has 1-nm-thick local-thin Si regions at both sides of n-type Si body.