850481.fig.007
Figure 7: 𝐼 𝑑 - 𝑉 𝑑 characteristics of HTOT SOI MOSFET at 𝑉 𝑑 = 0 . 1 V for various temperature conditions. The device has a 40-nm long p-type region (Lp). The device has 1-nm-thick local-thin Si regions at both sides of n-type Si body.