Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation

Figure 8

𝐼_𝑑-𝑉_𝑔 characteristics of HTOT SOI MOSFET with 2-nm-thick and 10-nm-long local-thin Si regions at 𝑉_𝑑=0.1 V for various temperature conditions; L_p = 20 nm and L_g = 60 nm. It is assumed that the ground-state level of the conduction band of the local-thin Si region is higher by 0.1 eV than the conduction band bottom.