Sub-Nanosecond Greater-Than-10-V Compact Tunable Pulse Generator for Low-Duty-Cycle High-Peak-Power Ultra-Wideband Applications

Table 1

Performance of UWB pulse generators.

Technology	Waveform	Pulse; amplitude; (V)	Pulse; width; (nanosecond)	Power; cons.; (mW)	Supply; voltage; (V)	Die; size; (mm^2)	Eff.; (%)	Jitter; (ps)	Ref.
GaAs HBT	Impulse	3.5–11.5	0.25–0.65	120	3.3–14	0.95×0.95	—	<1.5	[4]
	Monocycle	5.1–8.8	0.2–1.0				0.8
GaAs HEMT	Impulse	0.7	0.06	120	—	1.5×1.2	—	0.5–1.5	[11]
Si SRD	Monocycle	8	0.6–1.1	—	18	40×60	—		[12]
	Impulse	4.35	0.25	—	15	60×60	—	—	[13]
Si BJT	Monocycle	1.3	0.5	—	—	—	—	—	[14]
Si MOSFET	Impulse	1.4	0.4	—	2.5	0.3×0.25	—	—	[15]
	Monocycle	0.3–0.6	0.14–0.35	—			—
	Impulse	2.8	0.5	—	3.3	0.5	—	—	[16]
	Impulse	1.2	2.0	0.72	1.8	1.71×0.71	—	—	[17]
	Monocycle	3.7	0.5	—	—	—	—	—	[18]
	Impulse	0.03–0.12	0.07–0.18	17	1	0.0068	—	—	[19]
	Monocycle	0.66	0.38	19.8	1.2	0.25	2.6	—	[20]
	Monocycle	0.175	0.3	0.18	1.8	0.175×0.175	—	—	[21]